The applications for these leading-edge devices include class D audio, synchronous rectification, solar MPPTs (maximum power point tracker), DC-DC converters (hard-switched and resonant), and multilevel high voltage converters.

The EPC2215 (8 mΩ, 162 Apulsed) and the EPC2207 (22 mΩ, 54 Apulsed) are about half the size of the prior generation 200 V eGaN devices and double the performance. The performance advantage over a benchmark silicon device is even higher. The EPC2215 has 33% lower on-resistance, yet is 15 times smaller in size. Gate charge (QG) is ten times smaller than the silicon MOSFET benchmark with the new technology, and like all eGaN FETs, there is no reverse recovery charge (QRR) enabling lower distortion class D audio amplifiers as well as more efficient synchronous rectifiers and motor drives.

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• The EPC2215 from EPC is a 200 V, 8 mΩ eGaN FET with a pulsed current rating of 32 A in a tiny 7.4 mm² footprint. Ideal for class-D audio, synchronous rectification, DC/DC converters, solar MPPTs (maximum power point tracker), and motor drives.

Epc2215を搭載した開発ボード「epc9099」と、epc2207を載せた「epc90124」である。 最大出力電流は前者が15Aで、後者が8Aである。 どちらも、ゲートドライバーICには米Texas Instruments（TI）の「LMG1210」を採用した。.

Performance comparison of benchmark silicon 200 V FET vs. 200 V eGaN FETs

According to Alex Lidow, EPC’s co-founder and CEO, “This latest generation of eGaN FETs achieve higher performance in a smaller, more thermally efficient size, and at a comparable cost to traditional MOSFETs. The inevitable displacement of the aging power MOSFET with GaN devices is becoming clearer every day.”

Epc2115

EPC worked in collaboration with Semiconductor Power Electronics Center (SPEC) at University of Texas at Austin to develop a 400 V, 2.5 kW-capable eGaN FET-based four-level flying capacitor multilevel bridgeless totem-pole rectifier that is suitable for data center applications using the new EPC2215 200 V device. Professor Alex Huang from the University of Texas at Austin commented that, “the advantageous characteristics of eGaN FETs allowed this converter to achieve high power density, ultra-high efficiency, and low harmonic distortion.”

Fet Family

Epc2215

eGaN® FET DATASHEET EPC2215 EPC2215 – Enhancement Mode Power Transistor
VDS , 200 V
RDS(on) , 8 mΩ
ID , 32 A D EFFICIENT POWER CONVERSION G HAL S Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows
very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally
low QG and zero QRR. The end result is a device that can handle tasks where very high switching
frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings
PARAMETER
VDS
ID Drain-to-Source Voltage (Continuous) VALUE UNIT 200 V Continuous (TA = 25°C) 32 Pulsed (25°C, TPULSE = 300 µs) 162 Gate-to-Source Voltage 6 Gate-to-Source Voltage -4 TJ Operating Temperature -40 to 150 TSTG Storage Temperature -40 to 150 VGS A
V
°C Applications
• DC-DC Converters
• BLDC Motor Drives
• Sync Rectification for
AC/DC and DC-DC
• Multi-level AC/DC
Power Supplies • Wireless Power
• Solar Micro Inverters
• Robotics
• Class-D Audio Benefits Thermal Characteristics
PARAMETER EPC2215 eGaN® FETs are supplied only in
passivated die form with solder bars. …